Samsung unveils next-gen 3D memory tech for upcoming AI infrastructure
Samsung Electronics has unveiled its latest AI memory innovations at Future of Memory and Storage (FMS) 2026 in California, showcasing new 3D memory technologies designed for the next generation of AI infrastructure.
The company introduced concept models for zHBM and zNAND-O, alongside its new V10 BV-NAND, which features more than 400 layers and uses a new indstrty-first Bonding V-NAND architecture.
Samsung’s zHBM aims to overcome current AI memory limitations by stacking high-bandwidth memory (HBM) directly above AI accelerators instead of placing them side-by-side. The company says this design can reduce data travel distance, improving performance and power efficiency for AI workloads.
Samsung claims a future zHBM-based system could deliver around eight times the performance of HBM5, while achieving more than 10 times higher memory density, three times better energy efficiency and over 50% lower thermal resistance.
The company’s zNAND-O meanwhile is a high-performance NAND solution designed for edge AI applications, offering improved input/output performance and lower latency for real-time AI processing.
On top of that, the South Korean giant highlighted its V10 BV-NAND, which pushes NAND technology beyond 400 layers. The new architecture increases memory density by around 58% compared with the previous V9 generation, while improving read, write and I/O performance.
Alongside its future memory concepts, Samsung showcased its AI memory roadmap including HBM4E, HBM5, LPDDR5X-PIM and enterprise storage solutions aimed at supporting growing AI data centre demands.
Whether or not this frees up the current global memory shortage remains to be seen, though this announcement will see Samsung trying to position itself as an allround supplier for AI components as the tech sector continues to push for more powerful infrastructure.
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